Samsung Electronics Unveils HBM5 for the First Time, Betting on Next-Generation AI Memory Competition

Samsung Electronics publicly unveiled its eighth-generation High Bandwidth Memory (HBM5) prototype for the first time at the Computex 2026 exhibition, marking the continued acceleration of this South Korean chip giant's product layout in the AI memory market. Against the backdrop of rising memory prices across the board, market expectations for the profitability of South Korean memory manufacturers this year have been significantly revised upward.

Song Jae-hyuk, Chief Technology Officer of Samsung Electronics, stated at the exhibition that as AI systems become increasingly complex, competitiveness across the entire value chain—from memory and foundry services to logic chips and packaging—is becoming ever more critical. The core technical highlight of HBM5 is an innovative thermal management technology called Heat Path Block (HPB), which effectively mitigates heat accumulation in high-density stacked chips by guiding heat flow between semiconductor wafers, thereby enhancing performance stability and operational reliability.

At the HBM4E level, Samsung took the lead in shipping 12-layer HBM4E samples to major global customers in late May, becoming the first company in the industry to ship this product. The pin transmission speed of HBM4E is stable at 14Gbps and scalable to 16Gbps, an increase of over 20% compared to HBM4. Each stack offers a bandwidth of 3.6TB/s and a capacity of 48GB, representing an increase of over 30% compared to the previous generation.

The significant rise in commodity DRAM prices has substantially strengthened the HBM pricing dominance of Samsung and SK Hynix, leading to substantial upward revisions in profit expectations for both companies. Morgan Stanley predicts that Samsung's full-year operating profit this year could increase by 464% year-over-year, while SK Hynix's increase is expected to be around 280%.

HBM5: Thermal Management Breakthrough and Advanced Process Roadmap

The HBM5 prototype exhibited by Samsung this time features HPB thermal management technology as its core innovation. As the computational demands of AI models continue to climb, memory bandwidth requirements are rising accordingly, making heat accumulation in densely stacked chips an increasingly prominent issue that directly threatens chip performance and lifespan. Samsung stated that HPB technology improves overall operational stability by guiding heat away from critical areas between semiconductor wafers.

This technology has already been validated on the HBM4E platform and is planned for official commercial use alongside HBM5. Song Jae-hyuk indicated that the specific rollout pace will depend on customer demand, leaving open the possibility of earlier commercial deployment. In terms of process technology, HBM5 plans to incorporate Samsung's sixth-generation 10nm-class DRAM process (1c DRAM) and the 2nm logic process node.

Song Jae-hyuk further pointed out that implementing HPB technology requires redesigning and collaboratively integrating multiple layers of chip architecture. As a comprehensive semiconductor manufacturer integrating memory, foundry, and packaging capabilities, Samsung possesses cross-segment collaborative advantages that are difficult for other manufacturers to replicate. Additionally, Samsung is preparing to become the first company in the industry to deploy advanced packaging technology using hybrid copper bonding, which can further enhance heat dissipation efficiency and chip performance; samples related to this technology have already been provided to multiple customers.

HBM4E: Dual Upgrade in Speed and Capacity, Mass Production Imminent

Beyond the technological outlook for HBM5, Samsung simultaneously showcased wafers and chipsets from the HBM4E platform at the Computex exhibition. Exhibition information indicates that the product achieves a pin transmission speed of 14Gbps and a maximum bandwidth of 4TB/s. The core chips utilize the 1c DRAM process, while the logic base chips are manufactured by Samsung Foundry using a 4nm process.

According to Samsung's announcement on May 29, the delivered 12-layer HBM4E samples offer a 16% improvement in energy efficiency compared to the previous generation and an improvement of over 14% in thermal resistance characteristics, helping to extend reliability and reduce energy consumption in high-load data center scenarios. HBM4E shares the same core technical pathway as HBM4, aiming to enhance process stability and yield. Sang Joon Hwang, Executive Vice President of Samsung's Memory Development Division, stated that HBM4E once again demonstrates Samsung's technological differentiation advantages, and the company will continue to drive growth in the global AI memory market.

In terms of product line planning, in addition to the existing 12-layer 48GB version, Samsung will subsequently launch 32GB (8-layer) and 64GB (16-layer) versions to cover different customer needs, with mass production schedules advancing according to customer timelines.

Across-the-Board Rise in Memory Prices, South Korean Manufacturers' Profits Poised to Hit Record Highs

While Samsung actively lays out its AI memory technology, overall memory market price trends are also providing strong support. The market believes that after the sharp rise in commodity DRAM prices, their profitability has approached HBM levels. Consequently, neither Samsung nor SK Hynix needs to rely on HBM volume to maintain revenue, allowing them to maintain a strong stance in price negotiations.

Samsung has adopted a prudent capacity allocation strategy, avoiding excessive transfer of DRAM capacity to HBM, a approach that further supports the maintenance of high HBM price ranges. Reportedly, the negotiated price for Samsung's HBM4 is around $700, which is 20% to 30% higher than the previous generation HBM3E.

The simultaneous rise in prices for HBM, commodity DRAM, and NAND flash memory has brought expectations of comprehensive profit improvement for South Korean memory manufacturers. Morgan Stanley predicts that Samsung Electronics' full-year operating profit this year will reach approximately KRW 245.7 trillion, a year-over-year increase of 464%; SK Hynix's full-year operating profit is expected to be around KRW 179.4 trillion, a year-over-year increase of about 280%. The performance improvement for both companies is expected to persist throughout the year.